Toggle Spin-Orbit Torque MRAM With Perpendicular Magnetic Anisotropy

Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy efficiency. It is of particular interest to develop an SOT-MRAM device with perpendicular magnetic anisotropy (PMA) in order to lev...

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Bibliographic Details
Main Authors: Naimul Hassan, Susana P. Lainez-Garcia, Felipe Garcia-Sanchez, Joseph S. Friedman
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8892537/