Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications

Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications

Abstract With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing in-memory architecture-based resistive random access memory (RRAM) could be a potential candidate to overcome the von Neumann bottleneck problem of t...

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Bibliographic Details
Main Authors: Zhen-Yu He, Tian-Yu Wang, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang
Format: Article
Language:English
Published: SpringerOpen 2019-02-01
Series:Nanoscale Research Letters
Subjects:
Computing in-memory
RRAM
Switching
Implemented
Online Access:http://link.springer.com/article/10.1186/s11671-019-2875-4

Internet

http://link.springer.com/article/10.1186/s11671-019-2875-4

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