Resistive Switching in Graphene Oxide

Resistive Switching in Graphene Oxide

The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics. This is not only due to the huge commercial interest in developing the so-called Resistive Random-Access Memor...

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Bibliographic Details
Main Authors: Francisco J. Romero, Alejando Toral, Alberto Medina-Rull, Carmen Lucia Moraila-Martinez, Diego P. Morales, Akiko Ohata, Andres Godoy, Francisco G. Ruiz, Noel Rodriguez
Format: Article
Language:English
Published: Frontiers Media S.A. 2020-01-01
Series:Frontiers in Materials
Subjects:
graphene
graphene oxide
memristor
ReRAM
laser-reduction
Online Access:https://www.frontiersin.org/article/10.3389/fmats.2020.00017/full

Internet

https://www.frontiersin.org/article/10.3389/fmats.2020.00017/full

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