Resistive Switching in Graphene Oxide
The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics. This is not only due to the huge commercial interest in developing the so-called Resistive Random-Access Memor...
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doaj-ea56a9a18f704249846880a32a189d8f2020-11-25T01:23:21ZengFrontiers Media S.A.Frontiers in Materials2296-80162020-01-01710.3389/fmats.2020.00017500143Resistive Switching in Graphene OxideFrancisco J. Romero0Alejando Toral1Alberto Medina-Rull2Carmen Lucia Moraila-Martinez3Diego P. Morales4Akiko Ohata5Andres Godoy6Francisco G. Ruiz7Noel Rodriguez8Pervasive Electronics Advanced Research Laboratory, Department of Electronics and Computer Technology, Science Faculty, University of Granada, Granada, SpainPervasive Electronics Advanced Research Laboratory, Department of Electronics and Computer Technology, Science Faculty, University of Granada, Granada, SpainPervasive Electronics Advanced Research Laboratory, Department of Electronics and Computer Technology, Science Faculty, University of Granada, Granada, SpainParque de Innovación Tecnológica, Facultad de Ciencias Físico Matemáticas, Universidad Autónoma de Sinaloa, Culiacán, MexicoBioElectronics as Sensing Technologies Group, Science Faculty, University of Granada, Granada, SpainInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Kanagawa, JapanPervasive Electronics Advanced Research Laboratory, Department of Electronics and Computer Technology, Science Faculty, University of Granada, Granada, SpainPervasive Electronics Advanced Research Laboratory, Department of Electronics and Computer Technology, Science Faculty, University of Granada, Granada, SpainPervasive Electronics Advanced Research Laboratory, Department of Electronics and Computer Technology, Science Faculty, University of Granada, Granada, SpainThe search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics. This is not only due to the huge commercial interest in developing the so-called Resistive Random-Access Memories (ReRAMs) but also because resistive switching materials are gathering way to new forms of analog computation. Unlike in the field of traditional electronics technologies, where Silicon has monopolized most of the applications, the area of solid-state memristors is opened to a broad set of candidates that may contribute to unprecedented applications. In particular, the use of organic-based resistive switching materials can provide additional functionalities as structural flexibility for conformal integration or introduce new and cost-effective fabrication technologies. Following this new wave of organic memristive materials, this work aims at reviewing the existing models explaining the origins of resistive switching in Graphene Oxide, one of the most promising contenders on the battlefield of emerging memristive materials due to its low cost and easy processing methods. Within this manuscript, we will revisit the different theories supporting the phenomenology of resistive switching in this material nourishing the discussion with experimental results supporting the three main existing theories.https://www.frontiersin.org/article/10.3389/fmats.2020.00017/fullgraphenegraphene oxidememristorReRAMlaser-reduction |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Francisco J. Romero Alejando Toral Alberto Medina-Rull Carmen Lucia Moraila-Martinez Diego P. Morales Akiko Ohata Andres Godoy Francisco G. Ruiz Noel Rodriguez |
spellingShingle |
Francisco J. Romero Alejando Toral Alberto Medina-Rull Carmen Lucia Moraila-Martinez Diego P. Morales Akiko Ohata Andres Godoy Francisco G. Ruiz Noel Rodriguez Resistive Switching in Graphene Oxide Frontiers in Materials graphene graphene oxide memristor ReRAM laser-reduction |
author_facet |
Francisco J. Romero Alejando Toral Alberto Medina-Rull Carmen Lucia Moraila-Martinez Diego P. Morales Akiko Ohata Andres Godoy Francisco G. Ruiz Noel Rodriguez |
author_sort |
Francisco J. Romero |
title |
Resistive Switching in Graphene Oxide |
title_short |
Resistive Switching in Graphene Oxide |
title_full |
Resistive Switching in Graphene Oxide |
title_fullStr |
Resistive Switching in Graphene Oxide |
title_full_unstemmed |
Resistive Switching in Graphene Oxide |
title_sort |
resistive switching in graphene oxide |
publisher |
Frontiers Media S.A. |
series |
Frontiers in Materials |
issn |
2296-8016 |
publishDate |
2020-01-01 |
description |
The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics. This is not only due to the huge commercial interest in developing the so-called Resistive Random-Access Memories (ReRAMs) but also because resistive switching materials are gathering way to new forms of analog computation. Unlike in the field of traditional electronics technologies, where Silicon has monopolized most of the applications, the area of solid-state memristors is opened to a broad set of candidates that may contribute to unprecedented applications. In particular, the use of organic-based resistive switching materials can provide additional functionalities as structural flexibility for conformal integration or introduce new and cost-effective fabrication technologies. Following this new wave of organic memristive materials, this work aims at reviewing the existing models explaining the origins of resistive switching in Graphene Oxide, one of the most promising contenders on the battlefield of emerging memristive materials due to its low cost and easy processing methods. Within this manuscript, we will revisit the different theories supporting the phenomenology of resistive switching in this material nourishing the discussion with experimental results supporting the three main existing theories. |
topic |
graphene graphene oxide memristor ReRAM laser-reduction |
url |
https://www.frontiersin.org/article/10.3389/fmats.2020.00017/full |
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