Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT) at 67 °C. After room temperature...

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Bibliographic Details
Main Authors: H. Hofsäss, P. Ehrhardt, H.-G. Gehrke, M. Brötzmann, U. Vetter, K. Zhang, J. Krauser, C. Trautmann, C. Ko, S. Ramanathan
Format: Article
Language:English
Published: AIP Publishing LLC 2011-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.3646527

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http://dx.doi.org/10.1063/1.3646527

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