Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference
Minimizing the variation in threshold voltage (<i>V<sub>t</sub></i>) of programmed cells is required to the extreme level for realizing multi-level-cells; as many as even 5 bits per cell recently. In this work, a recent program scheme to write the cells from the top, for inst...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/5/584 |