Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunab...

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Bibliographic Details
Main Authors: Ha Quoc Thang Bui, Ravi Teja Velpula, Barsha Jain, Omar Hamed Aref, Hoang-Duy Nguyen, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Micromachines
Subjects:
μLED displays
μLEDs
GaN nanowires
core-shell structure
Online Access:https://www.mdpi.com/2072-666X/10/8/492

Internet

https://www.mdpi.com/2072-666X/10/8/492

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