Photoconductivity Spectra of Amorphous Hydrogenated Silicon Films with Nanocrystalline Inclusions

The technique for the study of amorphous hydrogenated silicon films with nanocrystalline inclusions non-uniformly distributed through the thickness (pm-Si:H) deposited on glass substrates is devised. Photocurrent spectra for the films of various thicknesses are studied when illuminated from the free...

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Main Authors: V. P. Afanasiev, A. V. Vasilev
Format: Article
Language:Russian
Published: Saint Petersburg Electrotechnical University "LETI" 2016-10-01
Series:Известия высших учебных заведений России: Радиоэлектроника
Subjects:
Online Access:https://re.eltech.ru/jour/article/view/134
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spelling doaj-eabbe78d3abd481198a176e529bea1782021-07-28T13:21:14ZrusSaint Petersburg Electrotechnical University "LETI"Известия высших учебных заведений России: Радиоэлектроника1993-89852658-47942016-10-01055760134Photoconductivity Spectra of Amorphous Hydrogenated Silicon Films with Nanocrystalline InclusionsV. P. Afanasiev0A. V. Vasilev1Saint Petersburg state electrotechnical university "LETI"Saint Petersburg state electrotechnical university "LETI"The technique for the study of amorphous hydrogenated silicon films with nanocrystalline inclusions non-uniformly distributed through the thickness (pm-Si:H) deposited on glass substrates is devised. Photocurrent spectra for the films of various thicknesses are studied when illuminated from the free film surface and from of the glass substrate. The presence of residual photoconductivity and two peaks in photoconductivity spectra of the films are determinated that, apparently, indicates the presence of crystalline and amorphous phases in the films.https://re.eltech.ru/jour/article/view/134pm-si:hpm-si:hphotocurrent spectrumresidual photoconductivity
collection DOAJ
language Russian
format Article
sources DOAJ
author V. P. Afanasiev
A. V. Vasilev
spellingShingle V. P. Afanasiev
A. V. Vasilev
Photoconductivity Spectra of Amorphous Hydrogenated Silicon Films with Nanocrystalline Inclusions
Известия высших учебных заведений России: Радиоэлектроника
pm-si:h
pm-si:h
photocurrent spectrum
residual photoconductivity
author_facet V. P. Afanasiev
A. V. Vasilev
author_sort V. P. Afanasiev
title Photoconductivity Spectra of Amorphous Hydrogenated Silicon Films with Nanocrystalline Inclusions
title_short Photoconductivity Spectra of Amorphous Hydrogenated Silicon Films with Nanocrystalline Inclusions
title_full Photoconductivity Spectra of Amorphous Hydrogenated Silicon Films with Nanocrystalline Inclusions
title_fullStr Photoconductivity Spectra of Amorphous Hydrogenated Silicon Films with Nanocrystalline Inclusions
title_full_unstemmed Photoconductivity Spectra of Amorphous Hydrogenated Silicon Films with Nanocrystalline Inclusions
title_sort photoconductivity spectra of amorphous hydrogenated silicon films with nanocrystalline inclusions
publisher Saint Petersburg Electrotechnical University "LETI"
series Известия высших учебных заведений России: Радиоэлектроника
issn 1993-8985
2658-4794
publishDate 2016-10-01
description The technique for the study of amorphous hydrogenated silicon films with nanocrystalline inclusions non-uniformly distributed through the thickness (pm-Si:H) deposited on glass substrates is devised. Photocurrent spectra for the films of various thicknesses are studied when illuminated from the free film surface and from of the glass substrate. The presence of residual photoconductivity and two peaks in photoconductivity spectra of the films are determinated that, apparently, indicates the presence of crystalline and amorphous phases in the films.
topic pm-si:h
pm-si:h
photocurrent spectrum
residual photoconductivity
url https://re.eltech.ru/jour/article/view/134
work_keys_str_mv AT vpafanasiev photoconductivityspectraofamorphoushydrogenatedsiliconfilmswithnanocrystallineinclusions
AT avvasilev photoconductivityspectraofamorphoushydrogenatedsiliconfilmswithnanocrystallineinclusions
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