Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit

Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit

The high performance Hf doped ZnO (Hf-ZnO) flexible thin film transistors (TFTs) were fabricated using Ag NWs as gate electrode and high-k HfO<sub>2</sub> as dielectric. The field effect mobility of Hf-ZnO is 14.7 cm<sup>2</sup>/Vs, I<sub>on</sub>/I<sub>off&...

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Bibliographic Details
Main Authors: Jialong Wu, Jun Yang, Xuyong Yang, Xingwei Ding
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Low-voltage
Ag nanowire
transistors
logic circuit
Online Access:https://ieeexplore.ieee.org/document/8981981/

Internet

https://ieeexplore.ieee.org/document/8981981/

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