The Interface and Mechanical Properties of a CVD Single Crystal Diamond Produced by Multilayered Nitrogen Doping Epitaxial Growth

The Interface and Mechanical Properties of a CVD Single Crystal Diamond Produced by Multilayered Nitrogen Doping Epitaxial Growth

In the present investigation, a nitrogen-doped multilayer homoepitaxial single crystal diamond is synthesized on a high-pressure high temperature (HPHT) Ib-type diamond substrate using the microwave plasma chemical vapor deposition (MPCVD) method. When 0.15 sccm of nitrogen was added in the gas phas...

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Bibliographic Details
Main Authors: Yun Zhao, Chengming Li, Jinlong Liu, Kang An, Xiongbo Yan, Lifu Hei, Liangxian Chen, Junjun Wei, Fanxiu Lu
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Materials
Subjects:
multilayers
nitrogen doping
single crystal diamond
X-ray topography
dislocation
mechanical property
Online Access:https://www.mdpi.com/1996-1944/12/15/2492

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https://www.mdpi.com/1996-1944/12/15/2492

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