Growth Uniformity in Selective Area Epitaxy of AlGaN/GaN Heterostructures for the Application in Semiconductor Devices
The design of modern semiconductor devices often requires the fabrication of three-dimensional (3D) structures to integrate microelectronic components with photonic, micromechanical, or sensor systems within one semiconductor substrate. It is a technologically challenging task, as a strictly defined...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-12-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/12/2129 |