A low-power low-error single-ended virtually-grounded-drain class AB switched-current memory cell

A low-power low-error single-ended virtually-grounded-drain class AB switched-current memory cell

A low-power low-error single-ended virtually-grounded-drain class AB switched-current memory cell is presented. The proposed circuit is relatively simple, based on a basic class AB SI memory cell and a levelshiftedgrounded-gate amplifier. No large differential circuitry and complicated clocking sche...

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Bibliographic Details
Main Authors: Banlue Srisuchinwong, Wimol San-Um, Sawasd Tantaratana
Format: Article
Language:English
Published: Prince of Songkla University 2007-01-01
Series:Songklanakarin Journal of Science and Technology (SJST)
Subjects:
switched-current technique
Class AB technique
memory cell
grounded-gate amplifier
offset compensation
charge injection
conduction error
low power
low error.
Online Access:http://www.sjst.psu.ac.th/journal/29_1_pdf/16wimol_SanUm_165-180%20.pdf

Internet

http://www.sjst.psu.ac.th/journal/29_1_pdf/16wimol_SanUm_165-180%20.pdf

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