Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SB...

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Bibliographic Details
Main Authors: Doldet TANTRAVIWAT, Wittawat YAMWONG, Udom TECHAKIJKAJORN, Kazuo IMAI, Burapat INCEESUNGVORN
Format: Article
Language:English
Published: Walailak University 2018-11-01
Series:Walailak Journal of Science and Technology
Subjects:
Schottky diode
Schottky barrier engineering
shallow implantation
titanium
Online Access:http://wjst.wu.ac.th/index.php/wjst/article/view/5968

Internet

http://wjst.wu.ac.th/index.php/wjst/article/view/5968

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