Analytical Model of Symmetric Halo Doped DG-Tunnel FET

Analytical Model of Symmetric Halo Doped DG-Tunnel FET

Two-dimensional analytical model of symmetric halo doped double gate tunnel field effect transistor has been presented in this work. This model is developed based on the 2-D Poisson’s equation. Some important parameters such that surface potential, vertical and lateral electric field, electric fie...

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Bibliographic Details
Main Authors: S. Nagarajan, Reeba korah, N. Mohankumar, C.K.Sarkar
Format: Article
Language:English
Published: Eastern Macedonia and Thrace Institute of Technology 2015-11-01
Series:Journal of Engineering Science and Technology Review
Subjects:
Halo Doping
Ambipolarity
Surface Potential
Tunnel FET
Poisson’s equation
Double gate _____________________
Online Access:http://www.jestr.org/downloads/Volume8Issue4/fulltext84202015.pdf

Internet

http://www.jestr.org/downloads/Volume8Issue4/fulltext84202015.pdf

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