Analytical Model of Symmetric Halo Doped DG-Tunnel FET
Two-dimensional analytical model of symmetric halo doped double gate tunnel field effect transistor has been presented in this work. This model is developed based on the 2-D Poisson’s equation. Some important parameters such that surface potential, vertical and lateral electric field, electric fie...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Eastern Macedonia and Thrace Institute of Technology
2015-11-01
|
| Series: | Journal of Engineering Science and Technology Review |
| Subjects: | |
| Online Access: | http://www.jestr.org/downloads/Volume8Issue4/fulltext84202015.pdf |
| Summary: | Two-dimensional analytical model of symmetric halo doped double gate tunnel field effect transistor has been presented
in this work. This model is developed based on the 2-D Poisson’s equation. Some important parameters such that surface
potential, vertical and lateral electric field, electric field intensity and band energy have been modelled. The doping
concentration and length of halo regions are varied and dependency of various parameters is studied. The halo doping is
imparted to improve the ON current and to reduce the intrinsic ambipolarity of the device. Hence we can achieve
improved ION/IOFF ratio. The scaling property of halo doped structure is analyzed with various dielectric constants. |
|---|---|
| ISSN: | 1791-2377 1791-2377 |