Potential of carbon nanotube field effect transistors for analogue circuits

Potential of carbon nanotube field effect transistors for analogue circuits

This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET's potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The l...

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Bibliographic Details
Main Authors: Khizar Hayat, Hammad M. Cheema, Atif Shamim
Format: Article
Language:English
Published: Wiley 2013-11-01
Series:The Journal of Engineering
Subjects:
CMOS analogue integrated circuits
invertors
MOSFET
oscillators
photolithography
carbon nanotube field effect transistors
analogue circuits
metal oxide semiconductor field effect transistors
MOSFETs
CNFET lithographic dimensions
complementary metal oxide semiconductor
RF parameters
CNFET-based inverter
three-stage ring oscillator
LC oscillator
oscillation frequency
Online Access:http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0067

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http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0067

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