Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation

Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation

Extreme ultraviolet lithography (EUVL) is a leading-edge technology for pattern miniaturization and the production of advanced electronic devices. One of the current critical challenges for further scaling down the technology is reducing the line-edge roughness (LER) of the final patterns while simu...

Full description

Bibliographic Details
Main Authors: Juhae Park, Sung-Gyu Lee, Yannick Vesters, Joren Severi, Myungwoong Kim, Danilo De Simone, Hye-Keun Oh, Su-Mi Hur
Format: Article
Language:English
Published: MDPI AG 2019-11-01
Series:Polymers
Subjects:
euv photoresist
line-edge roughness
coarse-grained model
molecular simulation
Online Access:https://www.mdpi.com/2073-4360/11/12/1923

Internet

https://www.mdpi.com/2073-4360/11/12/1923

Similar Items