High Temperature Simulation of 4H-SiC Bipolar Circuits

High Temperature Simulation of 4H-SiC Bipolar Circuits

High speed and high-temperature operation capabilities are desirable features of integrated circuits. Due to their innate electrical and physical properties, silicon devices face significant hurdles at elevated temperatures, while silicon carbide devices perform remarkably well in such environments....

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Bibliographic Details
Main Authors: Hazem Elgabra, Shakti Singh
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
4H-SiC
Bipolar Integrated Circuits
ECL
High Speed
High Temperature
Logic Family
Online Access:https://ieeexplore.ieee.org/document/7050233/

Internet

https://ieeexplore.ieee.org/document/7050233/

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