Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes

Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/ n-GaN metal-insulator-semiconductor (MIS) light emitting diodes, which do not contain p -doped material. Current-voltage and electroluminescence data indicate that an AlN insulating layer thickness of 10...

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Bibliographic Details
Main Authors: Chen-Sheng Lin, Kate Cavanagh, Hei-Chit L. Tsui, Andrei Mihai, Bin Zou, Duncan W.E. Allsopp, Michelle A. Moram
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/7947132/