Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes
Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/ n-GaN metal-insulator-semiconductor (MIS) light emitting diodes, which do not contain p -doped material. Current-voltage and electroluminescence data indicate that an AlN insulating layer thickness of 10...
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doaj-ecf7a6d215df44afaeb8b31e5b7ef30e2021-03-29T17:38:58ZengIEEEIEEE Photonics Journal1943-06552017-01-01941810.1109/JPHOT.2017.27143417947132Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel DiodesChen-Sheng Lin0Kate Cavanagh1Hei-Chit L. Tsui2Andrei Mihai3Bin Zou4Duncan W.E. Allsopp5Michelle A. Moram6Department of Materials, Imperial College London, London, U.K.Department of Electronic and Electrical Engineering, University of Bath, Bath, U.K.Department of Materials, Imperial College London, London, U.K.Department of Materials, Imperial College London, London, U.K.Department of Materials, Imperial College London, London, U.K.Department of Electronic and Electrical Engineering, University of Bath, Bath, U.K.Department of Materials, Imperial College London, London, U.K.Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/ n-GaN metal-insulator-semiconductor (MIS) light emitting diodes, which do not contain p -doped material. Current-voltage and electroluminescence data indicate that an AlN insulating layer thickness of 10 nm results in optimized diode behavior and maximum ultraviolet emission: At lower thicknesses carriers tunnel easily through the barrier, whereas at greater thicknesses the forward resistivity is excessively high. A decrease in emission intensity was observed at high injection currents due to Fowler-Nordheim tunnelling. However the device efficiency was found to improve by a factor of 10 when the AlN layer and the metal contact layer were deposited without breaking vacuum, thereby preventing any contamination or oxidation of the AlN surface. Additionally, this MIS device showed clear resonant tunnelling characteristics which are correlated with the enhanced light emission intensity.https://ieeexplore.ieee.org/document/7947132/Resonant tunnelling diodesultraviolet light emitting diodesmetal-insulator-semiconductor deviceAlN/GaNelectroluminescence |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Chen-Sheng Lin Kate Cavanagh Hei-Chit L. Tsui Andrei Mihai Bin Zou Duncan W.E. Allsopp Michelle A. Moram |
spellingShingle |
Chen-Sheng Lin Kate Cavanagh Hei-Chit L. Tsui Andrei Mihai Bin Zou Duncan W.E. Allsopp Michelle A. Moram Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes IEEE Photonics Journal Resonant tunnelling diodes ultraviolet light emitting diodes metal-insulator-semiconductor device AlN/GaN electroluminescence |
author_facet |
Chen-Sheng Lin Kate Cavanagh Hei-Chit L. Tsui Andrei Mihai Bin Zou Duncan W.E. Allsopp Michelle A. Moram |
author_sort |
Chen-Sheng Lin |
title |
Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes |
title_short |
Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes |
title_full |
Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes |
title_fullStr |
Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes |
title_full_unstemmed |
Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes |
title_sort |
ultraviolet emission from resonant tunnelling metal–insulator– semiconductor light emitting tunnel diodes |
publisher |
IEEE |
series |
IEEE Photonics Journal |
issn |
1943-0655 |
publishDate |
2017-01-01 |
description |
Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/ n-GaN metal-insulator-semiconductor (MIS) light emitting diodes, which do not contain p -doped material. Current-voltage and electroluminescence data indicate that an AlN insulating layer thickness of 10 nm results in optimized diode behavior and maximum ultraviolet emission: At lower thicknesses carriers tunnel easily through the barrier, whereas at greater thicknesses the forward resistivity is excessively high. A decrease in emission intensity was observed at high injection currents due to Fowler-Nordheim tunnelling. However the device efficiency was found to improve by a factor of 10 when the AlN layer and the metal contact layer were deposited without breaking vacuum, thereby preventing any contamination or oxidation of the AlN surface. Additionally, this MIS device showed clear resonant tunnelling characteristics which are correlated with the enhanced light emission intensity. |
topic |
Resonant tunnelling diodes ultraviolet light emitting diodes metal-insulator-semiconductor device AlN/GaN electroluminescence |
url |
https://ieeexplore.ieee.org/document/7947132/ |
work_keys_str_mv |
AT chenshenglin ultravioletemissionfromresonanttunnellingmetalinsulatorsemiconductorlightemittingtunneldiodes AT katecavanagh ultravioletemissionfromresonanttunnellingmetalinsulatorsemiconductorlightemittingtunneldiodes AT heichitltsui ultravioletemissionfromresonanttunnellingmetalinsulatorsemiconductorlightemittingtunneldiodes AT andreimihai ultravioletemissionfromresonanttunnellingmetalinsulatorsemiconductorlightemittingtunneldiodes AT binzou ultravioletemissionfromresonanttunnellingmetalinsulatorsemiconductorlightemittingtunneldiodes AT duncanweallsopp ultravioletemissionfromresonanttunnellingmetalinsulatorsemiconductorlightemittingtunneldiodes AT michelleamoram ultravioletemissionfromresonanttunnellingmetalinsulatorsemiconductorlightemittingtunneldiodes |
_version_ |
1724197559930454016 |