Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes
Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/ n-GaN metal-insulator-semiconductor (MIS) light emitting diodes, which do not contain p -doped material. Current-voltage and electroluminescence data indicate that an AlN insulating layer thickness of 10...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7947132/ |