A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation
Over the past decade, the dimensional scaling of semiconductor electronic devices has been facing fundamental and physical challenges, and there is currently an urgent need to increase the ability of dynamic random-access memory (DRAM). A semi-floating gate (SFG) transistor has been proposed as a ca...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-10-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/8/10/1198 |