A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation
Over the past decade, the dimensional scaling of semiconductor electronic devices has been facing fundamental and physical challenges, and there is currently an urgent need to increase the ability of dynamic random-access memory (DRAM). A semi-floating gate (SFG) transistor has been proposed as a ca...
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MDPI AG
2019-10-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/8/10/1198 |
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doaj-ed070c9d22c1435096326a212955cbda2020-11-25T00:04:25ZengMDPI AGElectronics2079-92922019-10-01810119810.3390/electronics8101198electronics8101198A Semi-Floating Gate Memory Based on SOI Substrate by TCAD SimulationHan Li0Chen Wang1Lin Chen2Hao Zhu3Qingqing Sun4School of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaOver the past decade, the dimensional scaling of semiconductor electronic devices has been facing fundamental and physical challenges, and there is currently an urgent need to increase the ability of dynamic random-access memory (DRAM). A semi-floating gate (SFG) transistor has been proposed as a capacitor-less memory with faster speed and higher density as compared with the conventional one-transistor one-capacitor (1T1C) DRAM technology. The integration of SFG-based memory on the silicon-on-insulator (SOI) substrate has been demonstrated in this work by using the Sentaurus Technology Computer-Aided Design (TCAD) simulation. An enhancement in retention characteristics, anti-disturbance ability, and fast writing capability, have been illustrated. The device exhibits a low operation voltage, a large threshold voltage window of ~3 V, and an ultra-fast writing of 4 ns. In addition, the SOI-based memory has shown a much-improved anti-irradiation capability compared to the devices based on bulk silicon, which makes it much more attractive in broader applications.https://www.mdpi.com/2079-9292/8/10/1198semi-floating gate transistorsilicon-on-insulatorretentionanti-disturbancewriting speedanti-irradiation |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Han Li Chen Wang Lin Chen Hao Zhu Qingqing Sun |
| spellingShingle |
Han Li Chen Wang Lin Chen Hao Zhu Qingqing Sun A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation Electronics semi-floating gate transistor silicon-on-insulator retention anti-disturbance writing speed anti-irradiation |
| author_facet |
Han Li Chen Wang Lin Chen Hao Zhu Qingqing Sun |
| author_sort |
Han Li |
| title |
A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation |
| title_short |
A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation |
| title_full |
A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation |
| title_fullStr |
A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation |
| title_full_unstemmed |
A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation |
| title_sort |
semi-floating gate memory based on soi substrate by tcad simulation |
| publisher |
MDPI AG |
| series |
Electronics |
| issn |
2079-9292 |
| publishDate |
2019-10-01 |
| description |
Over the past decade, the dimensional scaling of semiconductor electronic devices has been facing fundamental and physical challenges, and there is currently an urgent need to increase the ability of dynamic random-access memory (DRAM). A semi-floating gate (SFG) transistor has been proposed as a capacitor-less memory with faster speed and higher density as compared with the conventional one-transistor one-capacitor (1T1C) DRAM technology. The integration of SFG-based memory on the silicon-on-insulator (SOI) substrate has been demonstrated in this work by using the Sentaurus Technology Computer-Aided Design (TCAD) simulation. An enhancement in retention characteristics, anti-disturbance ability, and fast writing capability, have been illustrated. The device exhibits a low operation voltage, a large threshold voltage window of ~3 V, and an ultra-fast writing of 4 ns. In addition, the SOI-based memory has shown a much-improved anti-irradiation capability compared to the devices based on bulk silicon, which makes it much more attractive in broader applications. |
| topic |
semi-floating gate transistor silicon-on-insulator retention anti-disturbance writing speed anti-irradiation |
| url |
https://www.mdpi.com/2079-9292/8/10/1198 |
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