Projected Performance of Heterostructure Tunneling FETs in Low Power Microwave and mm-Wave Applications

Projected Performance of Heterostructure Tunneling FETs in Low Power Microwave and mm-Wave Applications

Characteristics of heterostructure tunneling FETs (HTFETs) at microwave and mm-wave frequencies are reviewed, and their simulated performance in a variety of prototype circuits is presented. The results illustrate that HTFETs provide substantial benefits in low power, high frequency circuits, relate...

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Bibliographic Details
Main Authors: Peter M. Asbeck, Kangmu Lee, Jie Min
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Tunneling FETs
low power electronics
low noise amplifiers
mm-wave detectors
voltage-controlled oscillators
noise in tunneling devices
Online Access:https://ieeexplore.ieee.org/document/7066931/

Internet

https://ieeexplore.ieee.org/document/7066931/

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