Projected Performance of Heterostructure Tunneling FETs in Low Power Microwave and mm-Wave Applications
Characteristics of heterostructure tunneling FETs (HTFETs) at microwave and mm-wave frequencies are reviewed, and their simulated performance in a variety of prototype circuits is presented. The results illustrate that HTFETs provide substantial benefits in low power, high frequency circuits, relate...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7066931/ |