Ge-on-Si Plasma-Enhanced Chemical Vapor Deposition for Low-Cost Photodetectors
The development of low-thermal-budget Ge-on-Si epitaxial growth for the fabrication of low-cost Ge-on-Si devices is highly desirable for the field of silicon photonics. At present, most Ge-on-Si growth techniques require high growth temperatures, followed by cyclic annealing at temperatures >...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Photonics Journal |
| Online Access: | https://ieeexplore.ieee.org/document/7155474/ |