High-Quality ITO/Al-ZnO/n-Si Heterostructures with Junction Engineering for Improved Photovoltaic Performance

A heterostructure of Sn-doped In<sub>2</sub>O<sub>3 </sub>(ITO)/Al-doped ZnO (AZO)/n-Si was proposed and studied for photovoltaics. The top ITO worked as a transparent conducting layer for excellent optical transparency and current collection. The AZO/n-Si served as the activ...

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Bibliographic Details
Main Authors: Chong Tong, Manjeet Kumar, Ju-Hyung Yun, Joondong Kim, Sung Jin Kim
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/10/15/5285