C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence

C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence

InAs/GaAs quantum dots (QDs) grown on a GaAs (001) substrate were studied by photoluminescence spectroscopy. Both C2v and D3h QDs with featured XX11, X11+, and XX21+ spectra have been found. A local defect field tunes the dominant exciton from X+ to X or X−, enhances the population on XX, XXX, and X...

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Bibliographic Details
Main Authors: Xiangjun Shang, Ben Ma, Haiqiao Ni, Zesheng Chen, Shulun Li, Yao Chen, Xiaowu He, Xingliang Su, Yujun Shi, Zhichuan Niu
Format: Article
Language:English
Published: AIP Publishing LLC 2020-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0019041

Internet

http://dx.doi.org/10.1063/5.0019041

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