Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy
The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO2 substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighte...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2013-06-01
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Series: | AIP Advances |
Online Access: | http://link.aip.org/link/doi/10.1063/1.4812871 |