Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy

Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy

The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO2 substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighte...

Full description

Bibliographic Details
Main Authors: Ikai Lo, Wen-Yuan Pang, Wen-Yen Chen, Yu-Chi Hsu, Chia-Ho Hsieh, Cheng-Hung Shih, Mitch M. C. Chou, Tzu-Min Hsu, Gary Z. L. Hsu
Format: Article
Language:English
Published: AIP Publishing LLC 2013-06-01
Series:AIP Advances
Online Access:http://link.aip.org/link/doi/10.1063/1.4812871

Internet

http://link.aip.org/link/doi/10.1063/1.4812871

Similar Items