Photoelectric properties of SnO2: Ag/P–Si heterojunction photodetector
N-type Tin dioxide thin films with thickness (350 nm) prepared by thermal evaporation method. The thin film SnO2 was doped with Ag by the rate (0.01, 0.02 and 0.03). Atomic Force Microscopic (AFM) was adopted to determine the grain size and roughness of the film surface. The electrical properties we...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2020-02-01
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| Series: | Energy Reports |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352484719308662 |