Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors

Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors

The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-μm backside illuminated CMOS image sensor (BSI CIS). The sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively. After exposure to protons, the radiation-ind...

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Bibliographic Details
Main Authors: Bingkai Liu, Yudong Li, Lin Wen, Dong Zhou, Jie Feng, Xiang Zhang, Yulong Cai, Jing Fu, Jiawei Chen, Qi Guo
Format: Article
Language:English
Published: Elsevier 2020-12-01
Series:Results in Physics
Subjects:
Backside illuminated CMOS image sensor
Random telegraph signal
Radiation effects
Proton irradiation
Theoretical calculation
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379720319069

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http://www.sciencedirect.com/science/article/pii/S2211379720319069

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