Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band

Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band

In this paper, isoelectronic doping with indium (In) in p-GaN is investigated on the basis of the thermal quenching of ultraviolet luminescence (UVL) band. A phenomenological rate-equation model is proposed as a nondestructive diagnostic technique to acquire the dopant ionization energy of p-GaN. In...

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Bibliographic Details
Main Authors: Yang Huang, Zhiqiang Liu, Xiaoyan Yi, Yao Guo, Guodong Yuan, JunXi Wang, Guohong Wang, Jinmin Li
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Subjects:
GaN
isoelectronic doping
thermal quenching
ionization energy.
Online Access:https://ieeexplore.ieee.org/document/7581116/

Internet

https://ieeexplore.ieee.org/document/7581116/

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