Different Effects of Mg and Si Doping on the Thermal Transport of Gallium Nitride
Mg and Si as the typical dopants for p- and n-type gallium nitride (GaN), respectively, are widely used in GaN-based photoelectric devices. The thermal transport properties play a key role in the thermal stability and lifetime of photoelectric devices, which are of significant urgency to be studied,...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2021-08-01
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| Series: | Frontiers in Materials |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2021.725219/full |