Modelling of Phosphorus and Boron Doping Concentration on SOI Wafer Based Diffusion Process

Modelling of Phosphorus and Boron Doping Concentration on SOI Wafer Based Diffusion Process

High concentration of Boron and Phosphorus elements are required in diffusion process during the fabrication of semiconductor devices such as diode and transistor based on Silicon On Insulator (SOI) wafer. Achieving high level of these elements’ concentration is the entry point for further research...

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Bibliographic Details
Main Authors: Anak Agung Ngurah Gde Sapteka, Anak Agung Ngurah Made Narottama, Kadek Amerta Yasa
Format: Article
Language:Indonesian
Published: Politeknik Negeri Bali 2020-03-01
Series:Logic
Subjects:
diffusion
boron
phosphorus
concentration
soi
Online Access:http://ojs.pnb.ac.id/index.php/LOGIC/article/view/1748/1336

Internet

http://ojs.pnb.ac.id/index.php/LOGIC/article/view/1748/1336

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