Performance comparison of 6T SRAM bit-cells based on side-contacted FED and CMOS

• Main Authors: Tara Ghafouri, Negin Manavizadeh
• Format: Article
• Language: English
• Published: Elsevier 2020-10-01
• Series: Alexandria Engineering Journal
• Subjects: 6T static random-access memory (SRAM) bit-cell; Side-contacted field effect diode (S-FED); Static noise margin; Power dissipation; Sensitivity analyses
• Online Access: http://www.sciencedirect.com/science/article/pii/S1110016820302945

Designing a Static Random-Access Memory (SRAM) cell configuration that copes with conventional complementary metal-oxide-semiconductor (CMOS) constraints on the cell area is desired to satisfy high packing density in integrated digital circuits. This paper analyzes and compares performance parameters of 6T SRAM bit-cells based on the side-contacted field-effect diode (S-FED) and conventional CMOS at 180 nm technology node. Steady-state responses demonstrate that in the worst-case, by applying weak logic 0/1 to the bit-lines, strong logic data is stored in the S-FED-based cell with superior write margin and lower power consumption by about one order of magnitude in comparison with the CMOS-based one. Comparing static noise margin reveals that S-FED-based cells enjoy prominent stability, especially in the read and hold operations with ~3X and 29% improvements, respectively, to the CMOS-based versions. In addition, enhancement of read-stability is attained utilizing S-FED-based cell, as well as decrement of subthreshold current and static power dissipation, compared with the CMOS-based one. Sensitivity analyses extracted from Monte Carlo simulations and butterfly curves indicate that S-FED-based cell successfully tolerates process and supply voltage variations in all operation modes, superior to the CMOS-based counterpart.