Temperature Rise Characteristics of Silicon Avalanche Photodiodes in Different External Capacitance Circuits Irradiated by Infrared Millisecond Pulse Laser
We experimentally studied the interaction between a millisecond pulse laser and silicon avalanche photodiode (Si-APD) in an external capacitance circuit. The temperature rise law of Si-APD irradiated by a millisecond pulse laser under different external capacitance conditions was obtained. The resul...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-07-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/11/8/866 |