Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures

Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures

We demonstrate the growth of ultra-thin AlN films on Si (111) and on a GaN/sapphire (0001) substrate using atomic layer epitaxy in the temperature range of 360 to 420 °C. Transmission electron microscopy and X-ray diffraction were used to characterize the interfaces, fine scale microstructure, and t...

Full description

Bibliographic Details
Main Authors: Ramasis Goswami, Syed Qadri, Neeraj Nepal, Charles Eddy, Jr.
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Coatings
Subjects:
atomic layer deposition
aluminum nitride
gallium nitride
interfaces
transmission electron microscopy
Online Access:https://www.mdpi.com/2079-6412/11/4/482

Internet

https://www.mdpi.com/2079-6412/11/4/482

Similar Items