Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
We demonstrate the growth of ultra-thin AlN films on Si (111) and on a GaN/sapphire (0001) substrate using atomic layer epitaxy in the temperature range of 360 to 420 °C. Transmission electron microscopy and X-ray diffraction were used to characterize the interfaces, fine scale microstructure, and t...
Main Authors: | Ramasis Goswami, Syed Qadri, Neeraj Nepal, Charles Eddy, Jr. |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-04-01
|
Series: | Coatings |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-6412/11/4/482 |
Similar Items
-
Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
by: Che Abdullah, C.A, et al.
Published: (2019) -
Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy
by: Paul Blanchard, et al.
Published: (2018-04-01) -
Study of III-nitride growth kinetics by molecular-beam epitaxy
by: Moseley, Michael William
Published: (2013) -
PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity
by: Sanjie Liu, et al.
Published: (2017-04-01) -
Fabrication of In<sub>x</sub>Ga<sub>1−x</sub>N Nanowires on Tantalum Substrates by Vapor-Liquid-Solid Chemical Vapor Deposition
by: Yan-Ling Hu, et al.
Published: (2018-11-01)