Low‐voltage linear bootstrapped sampling switch with a‐InGaZnO TFTs
Abstract This letter presents a novel linear bootstrapped sampling switch using amorphous indium‐gallium‐zinc‐oxide thin‐film transistors, which is designed using all enhancement n‐type transistors. The switch is simulated at a low supply voltage and a small transistor channel length of 2V and 2μm,...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-07-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12203 |