Quantifying erosion and retention of silicon carbide due to D plasma irradiation in a high-flux linear plasma device

Silicon carbide (SiC) may be a viable option for future plasma-facing components (PFCs) due to its low hydrogenic diffusivity, high temperature strength, and mechanical resilience to neutron damage (Causey et al., 1978). The erosion and retention properties of SiC were quantified via deuterium plasm...

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Bibliographic Details
Main Authors: G. Sinclair, T. Abrams, S. Bringuier, D.M. Thomas, L. Holland, S. Gonderman, J.H. Yu, R.P. Doerner
Format: Article
Language:English
Published: Elsevier 2021-03-01
Series:Nuclear Materials and Energy
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2352179121000326