Determining the Electrical Charging Speed Limit of ReRAM Devices

Redox-based random-access memory (ReRAM) has the potential to successfully address the technological barriers that today’s memory technologies face. One of its promising features is its fast switching speed down to 50 ps. Identifying the limiting process of the switching speed is, however...

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Bibliographic Details
Main Authors: M. von Witzleben, S. Walfort, R. Waser, S. Menzel, U. Bottger
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
VCM
Online Access:https://ieeexplore.ieee.org/document/9478940/