Development of low temperature technology for the growth of wide band gap semiconductor nanowires

Development of low temperature technology for the growth of wide band gap semiconductor nanowires

In<sub>2</sub>Ge<sub>2</sub>O<sub>7</sub>,<sub> </sub>Ge<sub>3</sub>N<sub>4</sub>,<sub> </sub>In<sub>2</sub>O<sub>3 </sub>and germanium nanowires were synthesized by the developed hydrazine (N...

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Bibliographic Details
Main Authors: David Jishiashvili, Zeinab Shiolashvili, Archil Chirakadze, Alexander Jishiashvili, Nino Makhatadze, Kakha Gorgadze
Format: Article
Language:English
Published: AIMS Press 2016-04-01
Series:AIMS Materials Science
Subjects:
nanowires
In<sub>2</sub>Ge<sub>2</sub>O<sub>7</sub>
Ge<sub>3</sub>N<sub>4</sub>
I<sub>2</sub>O<sub>3</sub>
hydrazine
InN
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