Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode

Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode

This paper reports the results on fabrication methodology and photoresponse characteristics of Mg2Si0.53Ge0.47 pn-junction photodiode. At first, we have grown a Mg2Si0.53Ge0.47 single crystal with the Vertical Bridgman growth process. The grown crystal was characterized structurally and electrically...

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Bibliographic Details
Main Authors: Ahmed A. M. El-Amir, Takeo Ohsawa, Yoshitaka Matsushita, Yoshiki Wada, Kiyoshi Shimamura, Naoki Ohashi
Format: Article
Language:English
Published: AIP Publishing LLC 2018-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5056221

Internet

http://dx.doi.org/10.1063/1.5056221

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