Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated...

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Bibliographic Details
Main Authors: Guangzhong Jian, Qiming He, Wenxiang Mu, Bo Fu, Hang Dong, Yuan Qin, Ying Zhang, Huiwen Xue, Shibing Long, Zhitai Jia, Hangbing Lv, Qi Liu, Xutang Tao, Ming Liu
Format: Article
Language:English
Published: AIP Publishing LLC 2018-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5007197

Internet

http://dx.doi.org/10.1063/1.5007197

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