Parasitic Current Induced by Gate Overlap in Thin-Film Transistors

As novel applications of oxide semiconductors are realized, various structural devices and integrated circuits are being proposed, and the gate-overlay defect phenomenon is becoming more diverse in its effects. Herein, the electrical properties of the transistor that depend on the geometry between t...

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Bibliographic Details
Main Authors: Hyeon-Jun Lee, Katsumi Abe, June-Seo Kim, Won-Seok Yun, Myoung-Jae Lee
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/14/9/2299