Parasitic Current Induced by Gate Overlap in Thin-Film Transistors

• Main Authors: Hyeon-Jun Lee, Katsumi Abe, June-Seo Kim, Won-Seok Yun, Myoung-Jae Lee
• Format: Article
• Language: English
• Published: MDPI AG 2021-04-01
• Series: Materials
• Subjects: oxide semiconductor; <i>a</i>-IGZO; barrier lowering; hump
• Online Access: https://www.mdpi.com/1996-1944/14/9/2299

As novel applications of oxide semiconductors are realized, various structural devices and integrated circuits are being proposed, and the gate-overlay defect phenomenon is becoming more diverse in its effects. Herein, the electrical properties of the transistor that depend on the geometry between the gate and the semiconductor layer are analyzed, and the specific phenomena associated with the degree of overlap are reproduced. In the semiconductor layer, where the gate electrode is not overlapped, it is experimentally shown that a dual current is generated, and the results of 3D simulations confirm that the magnitude of the current increases as the parasitic current moves away from the gate electrode. The generation and path of the parasitic current are then represented visually through laser-enhanced 2D transport measurements; consequently, the flow of the dual current in the transistor is verified to be induced by the electrical potential imbalance in the semiconductor active layer, where the gate electrodes do not overlap.