Non-thermal resistive switching in Mott insulator nanowires
Despite intensive research on the electrically driven insulator-to-metal transition, this phenomenon is not well understood. Using quasi 1D nanowires of two Mott insulators, the authors reveal the central role of defects in enabling a non-thermal doping driven insulator-to metal transition.
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2020-06-01
|
Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-020-16752-1 |