Electrical μ-Lens Synthesis Using Dual-Junction Single-Photon Avalanche Diode

This work presents a dual-junction, single-photon avalanche diode (SPAD) with electrical μ-lens designed and simulated in 90 nm standard complementary metal oxide semiconductor (CMOS) technology. The evaluated structure can collect the photons impinging beneath the pixel guard ring, as well as the p...

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Bibliographic Details
Main Authors: S. Ejdehakosh, M. A. Karami
Format: Article
Language:English
Published: Iran University of Science and Technology 2019-12-01
Series:Iranian Journal of Electrical and Electronic Engineering
Subjects:
pdp
Online Access:http://ijeee.iust.ac.ir/article-1-1336-en.html