Ultrashallow defects in SiC MOS capacitors
Capacitance-voltage measurements performed at cryogenic temperatures (14 – 500 K) have been used to determine the ultrashallow interface states in SiC MOS capacitors. These states occupies energy levels in SiC band gap on different energy levels up to 27 meV below the conduction band. Moreover, the...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
KeAi Communications Co., Ltd.
2020-01-01
|
| Series: | Solid State Electronics Letters |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589208820300235 |