Investigation of contact resistivity for Au—Ti—Pd—n-Si ohmic contacts for impatt diodes
Both contact resistivity of Au—Ti—Pd—n-Si ohmic contact and mechanism of current flow are studied in the 100—360 K temperature range. A method is proposed for reduction of error in determination of contact resistivity based on analysis of statistical dependences of the measured contact resistivity v...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2015-02-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2015/1_2015/pdf/05.pdf |